Introduction: How SiC and GaN are transforming Power Design
Silicon carbide (SiC) and gallium nitride (GaN) have emerged as game-changing wide-bandgap (WBG) semiconductors in power electronics. Compared to traditional silicon devices, they offer significant advantages in efficiency, switching speed, and thermal performance. WBG transistors can switch faster and at much higher frequencies than silicon MOSFETs, with far lower losses due to lower capacitances and negligible reverse-recovery charge.
This enables smaller, lighter, and more efficient power conversion systems, whereas silicon approaches its physical limits at high power and high frequency. As a result, SiC and GaN technologies are playing a growing role in industrial power applications – from electric vehicles and renewable energy to server power supplies – delivering performance that silicon simply cannot achieve.
In short, SiC and GaN are enabling a new generation of power electronics with higher efficiency and power density. They can handle higher voltages and temperatures than silicon, allowing simpler thermal management and improved reliability. With these advantages, industries are rapidly adopting WBG devices: automotive inverters are replacing silicon IGBTs with SiC MOSFETs to run at higher frequency and efficiency, and data centre power supplies are turning to GaN transistors to shrink size and losses.
Technology Comparison: SiC vs GaN
Let's compare SiC vs GaN across several key technical parameters:
Bandgap Energy
SiC and GaN are both wide-bandgap materials, with bandgap energies about three times that of silicon. 4H-SiC has a bandgap ≈3.2 eV while GaN is about 3.4 eV, versus silicon's ~1.1 eV. This wide bandgap translates to a much higher critical electric field for breakdown and a lower intrinsic carrier concentration, enabling devices that tolerate higher voltages and temperatures before the material conducts. In practice, this means SiC and GaN can handle far higher voltages and run hotter than silicon devices without thermal runaway.
Breakdown Voltage
Thanks to their wide bandgaps, both SiC and GaN support very high breakdown voltages. SiC is typically used for the highest voltage devices – today SiC MOSFETs and diodes are readily available at 650 V, 1200 V, and even 1700+ V ratings, and laboratory devices extend into the kV range.
GaN, by contrast, is currently targeted at the mid-voltage range – most GaN power transistors are rated up to 600–650 V (sufficient for offline AC mains applications). This is because most GaN power devices are lateral HEMTs on silicon substrates, which face difficulty beyond ~650 V.
In summary, SiC is preferred for ultra-high voltage (>650 V) applications such as traction inverters or grid-tied systems, whereas GaN excels in the sub-650 V domain. Both easily outperform silicon MOSFETs and IGBTs in breakdown strength.
Switching Frequency
GaN devices generally offer faster switching capabilities than SiC. GaN HEMTs have exceptionally low gate and output capacitances and high electron mobility, allowing switching frequencies in the MHz range – GaN power transistors can operate at >1 MHz and even up to ~10 MHz in some designs.
This enables designers to drastically shrink the size of inductors and transformers. SiC MOSFETs can also switch faster than traditional silicon (in the hundreds of kHz range reliably, vs tens of kHz for silicon IGBTs) but typically top out around ~1 MHz for practical power levels.
For example, SiC devices have been demonstrated switching >100 kHz in inverter applications (much higher than silicon IGBTs ~20 kHz). Thus, for very high frequency or fast-switching applications, GaN is often the choice, whereas SiC is more than sufficient for medium-frequency (tens to hundreds of kHz) needs at high power.
Power Efficiency
Both SiC and GaN enable substantially higher efficiency in power conversion. Their low conduction losses (due to lower R_DS(on) for a given die size, especially at high voltage) and dramatically lower switching losses (thanks to minimal charge storage and the absence of a sluggish body diode) mean that converters can reach efficiency levels unattainable with silicon alone.
For example, SiC MOSFETs replacing silicon IGBTs in EV inverters eliminate significant switching loss and allow >98% inverter efficiency. GaN FETs have virtually zero reverse-recovery loss (no body diode), which is ideal for hard-switched bridge circuits (like totem-pole PFC).
As a real-world illustration, a state-of-the-art 8.5 kW power supply that leverages GaN and SiC achieves ≈98% efficiency for data center applications. Both technologies enable meeting the highest efficiency standards (Titanium-level 80 PLUS® specifications demand 96%+ efficiency) with margin. In short, WBG devices slash conduction and switching losses, yielding higher efficiency and lower heat dissipation than silicon solutions.
Thermal Management
SiC and GaN can handle higher temperatures, but SiC is particularly outstanding in thermal properties. SiC has about 3× the thermal conductivity of silicon (approximately 3.7 W/m·K for SiC vs ~1.3 W/m·K for silicon), which means SiC devices can more easily spread and conduct heat away from the junction.
This allows higher power density and operation at junction temperatures of 175°C or even 200°C in some cases, benefiting high-power industrial designs. GaN's thermal conductivity is lower than SiC (GaN is roughly 1/3 of SiC's thermal conductivity), so GaN devices in high-power applications often rely on good packaging (e.g., thermal vias, copper spreading) to handle heat.
Even so, GaN can operate at high junction temperatures; for instance, automotive-grade GaN FETs are now rated for T_j up to 175°C (matching typical SiC and silicon ratings). Overall, both WBG materials tolerate heat better than silicon, which often must be kept below 150°C.
In summary, SiC is often chosen for its robust high-temperature, high-power operation, while GaN, although it runs slightly "hotter", still outperforms silicon and remains manageable with proper thermal design.
Cost Considerations
Traditionally, the cost of WBG devices has been higher than equivalent silicon parts, due to newer fabrication processes and smaller production scale. SiC wafers are expensive (the material is hard and was limited to smaller diameters, though 6-inch SiC is common now and 8-inch is forthcoming), and GaN device manufacturing (especially GaN-on-Si or GaN-on-SiC epitaxy) is complex.
However, costs are rapidly decreasing as volumes grow and manufacturing matures. Notably, GaN devices tend to be cheaper to produce than SiC at a given voltage – GaN can be made on silicon wafers in standard fabs, making it relatively easier and potentially lower-cost in high volume.
SiC devices involve costly crystal growth and processing, but those costs are falling as more suppliers (and larger wafer sizes) come online. As of today, silicon MOSFETs remain the most inexpensive option for low-to-moderate performance needs, but when stringent efficiency or high-voltage requirements arise, the improved performance of SiC/GaN can offset their higher device cost (e.g., by enabling simpler cooling or smaller magnetics, which reduces overall system cost).
Market trends indicate a steep growth in WBG adoption, which will further drive down cost through economies of scale. In fact, forecasts project the SiC/GaN power semiconductor market to grow from about $1.6B in 2024 to over $40B by 2034, a clear indicator that cost barriers are coming down and the technology is becoming mainstream.
Industrial Use Cases for SiC and GaN
Wide-bandgap devices are being leveraged in many industrial and commercial power electronics. Some key applications where SiC and GaN are making a significant impact include:
Industrial IoT Power Management
In the Industrial IoT realm, there are countless distributed sensors, controllers, and devices that need efficient, compact power supplies. GaN, in particular, allows for ultra-small point-of-load converters and adapters with high efficiency, reducing wasted power in always-on embedded systems.
For example, GaN-based regulators can operate at high frequency to shrink inductors, which is ideal for space-constrained IoT modules. SiC and GaN are also used in higher-power IoT infrastructure – e.g., in smart building energy managers or factory automation hubs – to achieve better efficiency and lower heat.
The result is greener, cooler-running IoT devices that can be deployed in tight spaces without bulky heatsinks, aligning with the energy-conscious goals of modern IoT deployments.
Motor Drives and Automation
Industrial motor drives (from small servo drives to large factory motors) benefit greatly from WBG semiconductors. SiC MOSFETs are being adopted in variable frequency drives and industrial inverters to handle higher bus voltages (such as 800 V or more DC) with lower losses, which improves efficiency and reduces cooling in motor control centres.
GaN transistors, while typically lower voltage, find use in servo drives and robotics: their fast switching allows very precise control and high PWM frequencies for smoother motor operation. In automation equipment (conveyors, machine tools, robot arms, etc.), using SiC/GaN in the inverter stages can increase system efficiency and power density.
For instance, servo amplifiers and CNC drives can use GaN to achieve faster current loops and reduce the size of the drive unit. Similarly, robotic and CNC motor drivers are employing SiC/GaN to handle rapid load changes with less loss.
In summary, SiC is ideal for high-voltage/high-power industrial motors (e.g., large 3-phase motors in processing plants), while GaN suits lower-voltage, high-frequency drives (e.g., precision servo motors), each enabling better efficiency and performance in automated systems.
High-Efficiency Power Conversion (DC-DC, AC-DC)
SiC and GaN are transforming industrial power supplies, UPS systems, and converters:
AC-DC Front Ends (PFC) – Traditional silicon-based PFC circuits are limited in switching frequency and incur significant losses. Replacing the silicon diode+MOSFET with a SiC Schottky diode and SiC or GaN transistor in a totem-pole PFC can achieve >99% power factor correction efficiency. This is critical for data centre PSUs, industrial UPS, and telecom rectifiers. In fact, GaN FETs have enabled the totem-pole PFC topology to become practical by virtually eliminating diode reverse-recovery losses.
Isolated DC-DC converters in industrial contexts (48 V to 12 V converters, fork-lift or AGV battery converters, etc.) are using SiC and GaN to push switching frequencies into the MHz range, greatly reducing transformer size.
For example, in server and telecom power supplies, GaN is often preferred for up to ~400–600 V input stages – it allows very high frequency PWM operation, which shrinks magnetics and improves transient response. Meanwhile, SiC excels in high-power converters such as those in renewable energy systems or large industrial SMPS where the bus voltage is high (800–1500 V) and efficiency is paramount.
In short, for any application demanding high-efficiency AC-DC or DC-DC conversion – from compact 100 W power modules to 50 kW warehouse UPS – SiC and GaN offer solutions. GaN tends to dominate in medium-power, high-frequency converters, while SiC is common in high-power, high-voltage converters. Both contribute to achieving industry-leading efficiency levels, often meeting or exceeding regulatory targets for energy efficiency.
Renewable Energy Systems
The push for renewable energy (solar PV, wind, energy storage) heavily relies on advanced power electronics, and WBG devices are key enablers here. SiC devices are a natural fit for solar inverters – many modern PV inverters (from residential string inverters to large solar farm inverters) use SiC MOSFETs and SiC diodes to handle high DC bus voltages (typically 600–1000 V DC for strings, up to 1500 V in utility-scale) with minimal loss.
SiC's high voltage capability and low switching losses directly translate to higher conversion efficiency from DC to AC, which improves the energy yield of solar installations. Additionally, SiC Schottky diodes are commonly used in the boost stages of PV inverters to minimise switching losses and improve efficiency, or as freewheeling diodes in inverter legs.
On the energy storage and battery management side, SiC enables efficient high-power DC-DC converters for battery charging/discharging in large systems. GaN is also finding roles in renewable systems, particularly in smaller-scale or auxiliary converters.
Overall, renewables benefit from SiC for its high-voltage, high-efficiency operation, and GaN for any high-frequency, lower-voltage tasks. The result is higher efficiency power conversion in solar/wind systems and reduced cooling requirements, helping meet strict efficiency mandates for green energy.
Product Offerings from Key Manufacturers
Next, we examine how four semiconductor manufacturers – Nuvoton, Novosense, Magnachip, and Bruckewell – are contributing to the SiC/GaN ecosystem with their product offerings. Each brings unique solutions for industrial power engineers:
Nuvoton
Nuvoton Technology (a Taiwanese semiconductor company known for microcontrollers) has expanded into power semiconductors, including wide-bandgap devices. Nuvoton's key focus is on GaN technology. Through its foundry services and process development, Nuvoton has established a special process flow to fabricate GaN power devices to meet the needs of high-efficiency, high-power systems.
While Nuvoton's publicly released product info on SiC/GaN is limited, they have demonstrated capability in GaN through other domains: for example, Nuvoton offers an RF GaN Power Amplifier module for 5G base stations.
On the silicon carbide side, Nuvoton does not yet market SiC MOSFETs or diodes; however, they do provide many supporting technologies for power electronics. Nuvoton's line of Power ICs and microcontrollers can complement WBG devices – for instance, their motor-control MCUs and isolated gate driver ICs can drive SiC MOSFETs in an inverter.
In summary, Nuvoton's contribution lies in GaN device fabrication capability and system ICs. Engineers can look to Nuvoton for GaN technology especially, and for controllers that manage SiC/GaN-based power stages.
Novosense
Novosense Microelectronics (China) has positioned itself as a specialist in analogue and mixed-signal ICs for sensing and driving, and they have developed a robust portfolio to support SiC and GaN power devices. Rather than manufacturing the transistors, Novosense focuses on the interface and control – notably gate driver ICs and integrated power stages for WBG transistors.
A standout offering from Novosense is their line of isolated gate drivers that are tailored for SiC MOSFETs and GaN HEMTs. For example, Novosense's NSi68515 is a single-channel intelligent isolated driver specifically designed to drive SiC MOSFETs (and IGBTs) in high-voltage systems up to 2121 V DC bus.
For GaN, Novosense has developed dedicated solutions as well. They offer the NSD2621, a high-voltage isolated half-bridge driver specifically meant for enhancement-mode GaN FETs. This driver addresses GaN's unique needs: it provides a very high common-mode noise rejection (up to 150 V/ns CMTI) and can tolerate the negative transient voltages (~– 700 V) that can occur at the switch node in half-bridge GaN circuits.
Perhaps most impressively, Novosense has an integrated GaN power stage product: the NSG65N15K. This device combines a half-bridge driver (the NSD2621) and two 650 V GaN transistors (each 150 mΩ) into a single compact package. Essentially, it is a half-bridge GaN module in a 9×9 mm QFN that can handle up to 20 A, with both high-side and low-side GaN FETs internally driven.
In summary, Novosense's SiC/GaN offerings are in the realm of high-performance driver ICs and integrated power stages. They do not sell SiC/GaN transistors themselves, but they make the chips that drive those transistors to their full potential.
Magnachip
Magnachip Semiconductor, based in South Korea, is a well-established player in power MOSFET technology (particularly in the trench MOSFET space). While Magnachip's portfolio today is largely focused on advanced silicon power MOSFETs rather than SiC or GaN, their products are highly relevant in the context of wide-bandgap adoption.
Magnachip produces Super Junction (SJ) MOSFETs in the 600 V, 700 V, and 800 V classes, which are used in offline AC-DC power converters (similar application space as GaN or SiC up to 800 V). These MOSFETs feature embedded gate-source ESD zener diodes for robustness against surges and have ~30% lower total gate charge compared to previous generations, which directly improves switching efficiency.
When it comes to SiC/GaN specifically, Magnachip has not yet released public products in those categories (as of now). However, Magnachip's high-voltage silicon devices often complement WBG adoption. For example, a power supply designer might use Magnachip's 800 V MOSFET for an input flyback stage if GaN is not necessary, or for a cost-sensitive design where silicon suffices.
In summary, Magnachip provides high-quality silicon MOSFET solutions that cover many industrial needs up to 800 V. While they do not directly offer SiC/GaN parts as of now, their MOSFETs can be seen as complementary or interim solutions in the WBG journey.
Bruckewell
Bruckewell Semiconductor specialises in power discretes and notably offers products in silicon, SiC, and GaN technologies. They provide a comprehensive line-up of components that allow engineers to upgrade designs from silicon to wide-bandgap within the same brand.
SiC Schottky Diodes: Bruckewell produces SiC Schottky barrier diodes aimed at high-efficiency rectification and freewheeling applications. Their SiC diode family covers 650 V and 1200 V ratings with current options from 4 A up to 40 A, offered in popular power packages (TO-220, TO-247, DPAK, DFN, etc.).
SiC MOSFETs: Bruckwell also has SiC MOSFETs up to 1200 V in its portfolio. By offering SiC MOSFETs, Bruckewell enables designers to implement full SiC half-bridges (using their MOSFETs and diodes together) for applications like solar inverters, motor drives, etc.
GaN HEMTs and Cascodes: Bruckewell is somewhat unique in that it uses a GaN-on-Sapphire process for its GaN devices. Most industry GaN is on silicon, but Bruckewell chose sapphire substrates, which yields excellent electrical isolation and very low leakage currents (at the expense of thermal conductivity).
Bruckewell's GaN device portfolio highlights multiple approaches:
A cascode GaN (combining a D-mode GaN with a low-voltage Si MOSFET for normally-off operation)
An enhancement-mode GaN HEMT
A GaN "IC" that integrates a GaN cascode with a gate driver
Overall, Bruckewell distinguishes itself by providing WBG power semiconductors in discrete form that are accessible and flexible. An industrial power designer can obtain SiC diodes/MOSFETs from Bruckewell to instantly upgrade an existing design's efficiency (often as drop-in replacements for legacy diodes/MOSFETs).
Design Considerations: Selecting the Right Technology
Choosing between SiC and GaN (or determining how to mix them in a design) requires careful consideration of the application requirements. Engineers should evaluate several key factors to select the optimal device:
Voltage and Current Ratings
Perhaps the first decision point is the DC-link or bus voltage of the application and the required current. SiC devices excel at high voltage and high current – they are available for 1200 V, 1700 V and beyond, and can handle tens to hundreds of amperes per device (or thousands in modules).
If your design involves, say, an 800 V DC bus (common in EV or industrial drives) or a 1500 V solar string, SiC is the natural choice; GaN in those voltage ranges is not yet mainstream. GaN devices are generally favoured up to ~600 V applications.
For instance, for a 400 V bus (typical of telecom or datacentre power) or offline 240 VAC input, GaN FETs (650 V rated) can be used and will offer excellent performance. In terms of current, SiC MOSFETs in TO-247 can handle >50 A, and power modules even more (with parallel dies), whereas GaN transistors, being smaller die typically, might handle on the order of 10–30 A each (though you can parallel GaN devices too).
So, for very high power (kW-level with high voltage), SiC is usually a better fit, while for medium power or lower voltage, GaN is compelling. It's common to see a combination: e.g., SiC diodes or MOSFETs used on a PFC front-end (handling 400–800 V), with GaN used on a subsequent DC-DC stage at 400 V or less.
Switching Speed Requirements
Determine how fast and at what frequency the devices need to switch. GaN is preferable for the highest switching frequencies – if you need to switch in the MHz range or require extremely fast edges (e.g., for very low switching loss or special modulation schemes), GaN can deliver where SiC might be hard pressed.
For example, in a MHz-class resonant converter or a very fast on-off pulsed system, GaN's ability to switch >5–10 MHz (in lower-power cases) and its low gate charge make it ideal. SiC, on the other hand, is quite capable up to hundreds of kHz – many SiC MOSFET-based inverters run at 50–200 kHz with great success (compared to ~20 kHz typical for IGBTs).
If your application can achieve its goals at, say, 100 kHz, SiC might be sufficient and offers the high-voltage robustness. If pushing to, say, 500 kHz or 1 MHz to shrink magnetics, GaN may make that easier.
Thermal and Packaging Constraints
Consider the thermal environment of the design and the form factor. If the design must operate at high ambient temperatures or with limited cooling, SiC's ability to accommodate a higher junction temperature and better thermal conductivity can offer more margin.
For example, in a sealed industrial motor drive with minimal airflow, using SiC devices that can run safely at 150–175°C junction (and have lower losses) might prevent overheating better than a cluster of GaN devices (which individually might run hotter due to lower thermal conductivity and possibly slightly higher switching loss at full load).
Packaging is related: SiC MOSFETs often come in larger through-hole packages (TO-247, TO-263, etc.) or even modules, which have good thermal paths and can be bolted to heatsinks. GaN devices commonly come in compact SMT packages (QFN, DFN, or even chip-scale BGA packages) to minimise inductance.
If your design is very space-constrained, GaN's small packages are a plus, but you must ensure the PCB can dissipate the heat (using copper planes, thermal vias, etc.). If your design can accommodate module packaging, SiC power modules might greatly simplify thermal management for high-power designs by integrating multiple MOSFETs/diodes on a substrate with good cooling.
Application-Specific Requirements
Finally, consider the nuances of your particular application:
Short-circuit and surge robustness: SiC MOSFETs typically have better short-circuit withstand time than GaN HEMTs (which are smaller geometry and can be more sensitive to overload). If your application (like motor drives) demands the ability to survive short circuits for, say, 5–10 µs while protection kicks in, SiC might be safer.
Efficiency vs frequency trade-offs: If absolute peak efficiency is required at a given power level, you might choose one over the other. For instance, at ~5 kW, a SiC-based design switching at 50 kHz might achieve 98% efficiency, whereas a GaN design switching at 200 kHz to reduce size might have slightly lower efficiency (maybe 96–97%) due to higher switching frequency.
EMI and noise considerations: GaN's very fast switching can lead to more high-frequency EMI (electromagnetic interference), which might complicate compliance with EMC standards unless mitigated. SiC switches fast as well, but typically a bit slower than GaN, possibly easing EMI filtering.
Gate drive complexity: GaN HEMTs have unique gate drive needs – typically a gate voltage of 6 V (for enhancement-mode) and a very strict limit (often max 7 or 8 V, and negative voltage must be avoided unless specified). SiC MOSFETs require higher gate voltage (usually +15 V gate drive and often –3 to –5 V turn-off), so you'll need a driver that can output that swing, and perhaps negative bias for turn-off to prevent the Miller effect.
Market Trends & Future Outlook
The adoption of SiC and GaN in industrial power electronics is not only well underway – it's accelerating. Several market and technology trends are worth noting:
Rapid Market Growth and Investment
The WBG power semiconductor market is experiencing robust growth, driven by high demand in automotive, renewable energy, and data centres. Analysts project the global SiC/GaN market to grow from around $1–2 billion in the early 2020s to tens of billions by the early 2030s.
SiC devices, in particular, are being produced in greater volumes as multiple companies ramp up 6-inch SiC fabs, and GaN device shipments (especially for consumer and IT electronics) are climbing steeply. Asia-Pacific is a leading region in adoption (over half of the market by revenue), with China investing heavily in both SiC and GaN for electric vehicles and 5G/industrial needs.
Automotive Electrification as a Catalyst
The electric vehicle (EV) boom is a massive driver for SiC, and to a growing extent, GaN. Automakers have found that SiC devices in the drivetrain inverter can increase range (by improving efficiency ~5% or more) and reduce cooling needs, which in turn can lower battery costs or extend vehicle range.
Many major EV OEMs have adopted SiC for the main traction inverters and onboard chargers. GaN is being eyed for less demanding automotive applications like 48 V systems, lidar, or perhaps future onboard chargers. With EVs and plug-in hybrids rising, the automotive sector's demand for qualified WBG parts is skyrocketing.
Industrial Efficiency Standards and Green Initiatives
On the industrial side, ever-tightening efficiency regulations for power supplies, motor drives, and appliances are practically mandating the move to WBG. For example, data centres strive for 80 PLUS Titanium PSU efficiency (≥96%), which is very hard to meet with silicon alone – GaN is being adopted in server PSUs to hit those levels.
Renewable energy standards demand high efficiency in inverters to maximise use of generated power; using SiC helps meet those targets and is often required to qualify for incentives. Governments and regulatory bodies around the world are also setting CO₂ reduction and energy saving goals, which translate to using the most efficient technology available – again pointing to WBG.
Technology Maturation and Ecosystem Growth
Both SiC and GaN technologies are maturing, and we're seeing rapid improvements and new product introductions. On the SiC front, new generations of MOSFETs have lower and lower R_DS(on) and higher robustness; package innovations (like dual-sided cooling, advanced modules) are improving performance.
Integration is also happening – for instance, SiC MOSFET half-bridge modules with incorporated gate drivers and protections are emerging, simplifying design. GaN technology is advancing with things like GaN ICs (monolithic integration of GaN FETs and drivers or logic).
Another trend is GaN moving to higher voltages: while 600 V is standard, we now hear about 900 V GaN or 1200 V GaN prototypes, often by using GaN-on-GaN substrates or advanced device structures. This could eventually encroach on SiC's high-voltage territory, though that's years away for mass production.
Future Outlook – Complementary, Not Just Replacement
It's clear that SiC and GaN are here to stay and will increasingly dominate high-performance power electronics, but interestingly, they will co-exist with silicon devices for a long time in a complementary way. As one industry pundit put it, "Silicon, GaN, and SiC all have a place" and engineers will mix them as needed.
We are already seeing designs where silicon MOSFETs handle low-voltage sections, GaN handles the middle, and SiC handles the high end. Going forward, wide-bandgap devices might enable new power conversion architectures – for example, single-stage AC/DC converters operating at high frequency, or matrix converters that were impractical with slow devices.
There's also research in even wider bandgap materials like Gallium Oxide (Ga₂O₃) or Diamond, but those are a bit far out; in the next decade, SiC and GaN will be the workhorses.
Conclusion: Making the Right Choice for Your Application
SiC and GaN technologies have proven their ability to revolutionise industrial power electronics design. They deliver substantial improvements in efficiency, switching speed, and power density over legacy silicon devices, enabling engineers to meet ambitious performance and efficiency targets.
Silicon Carbide shines in high-voltage and high-power scenarios – from hundreds of volts to kilovolts – offering robust operation and efficiency in applications like motor drives, renewable energy inverters, and EV power systems. Gallium Nitride, on the other hand, dominates at high switching frequencies and in compact designs, making it ideal for server supplies, point-of-load converters, and any application where minimizing size or maximizing speed is critical.
Each technology has its strengths: SiC handles heavy loads and high temperatures with ease, while GaN enables extreme switching speeds and integration. Rather than one replacing the other, they complement each other – often working together in modern power conversion systems to achieve optimum performance at each stage.
For engineers, the challenge is no longer "should I consider SiC or GaN?" – that is a given – but rather "how to select and implement the right SiC/GaN device for my design." As we've discussed, this involves balancing voltage, frequency, thermal, and cost requirements, and utilizing the growing ecosystem of drivers and tools available.
With the right choice, a design that once struggled to meet efficiency or size specs with silicon can not only meet but exceed those specs with margin. Wide-bandgap semiconductors are no longer experimental – they are commercially mature and ready to be designed in, with support from many manufacturers.
Contact Ineltek for Expert Guidance
The time is ripe to leverage SiC and GaN in your own projects. Whether you are upgrading an existing power supply for better efficiency or architecting a next-generation motor drive, embracing WBG devices could be the key to a superior design.
If you're considering any of the technologies mentioned in this article, Ineltek can arrange technology introductions with the people who make them. Drop us a line and let's start talking.