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Magnachip Semiconductor

An introduction to Magnachip's IGBTs and their applications

IGBTs (Insulated-Gate Bipolar Transistors) combine the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor. They are fast becoming essential in power system design to decrease losses and improve switching behavior. These three-terminal power semiconductor devices, give design engineers a viable power switching option perfect for EV Power Trains and charging, Solar Energy in string and micro inverters, consumer white goods and industrial motor control.  

The main advantages of using IGBTs over other types of transistors are: 

  • Relatively fast switching speeds - 20-100Khz

  • Low driving power

  • Simple drive circuit courtesy of the input MOS gate structure

It also offers a very low on-state voltage drop, due to conductivity modulation, and has superior on-state current density. For example, in the case of a variable frequency driver (VFD), an IGBT will switch the current on and off so rapidly that less voltage will be channelled to the motor, helping to create a pulse-width modulation (PWM) wave to control the speed of the motor.

IGBT technology is available in a variety of voltage classes, current ratings, and topologies (e.g. half bridge, full bridge). Magnachip Semiconductor offers discrete IGBTs in the field of power semiconductors. These IGBTs are produced using Magnachip’s advanced Field Stop Trench IGBT Technology. This technology provides low VCE(sat)*, high switching performance with high speed switching and low power loss, combined with ruggedness and excellent quality.

 

* Difference in voltage between the collector and emitter at saturation

Applications

IGBTs can play a major role not only in the development of renewable energy ventures but in the development of technology for EVs and HEVs.

Solar Power

Omdia, a global market research firm, estimates that the global market for IGBTs in the renewable energy sector will grow 15% annually from 2022 to 2025. In March 2022, Magnachip developed a new 650V IGBT built with their Field stop trench technology which improved the current density over the prior generation by some 30%. The 650V IGBT provides minimum short-circuit withstand time of 5µs, optimized for parallel switching because it naturally has a constant positive temperature coefficient. Parallel switching increases the load current and ultimately the maximum output power.

In addition, the 650V IGBT features anti-parallel diodes for fast switching and low switching loss, while guaranteeing a maximum operating junction temperature of 175°C. Based on standards issued by the Joint Electron Device Engineering Council (JEDEC), Magnachip's 650V IGBT can be widely used for applications requiring strict power level and high efficiency, such as solar boost inverters and converters, uninterruptible power supplies and universal power inverters.

Automotive

Electric vehicles (EV) and hybrid electric vehicles (HEV) comprise a running motor driven by converting direct current (DC) power stored in a high-voltage battery using a power conversion system. IGBT modules are mainly used for such power conversion system and they are required to be compact, since many power components (e.g. high-voltage battery, power conversion system, motor, etc.) must be installed within a confined space. The growing need to minimize power system size and weight is increasing the design of IGBT modules that use the latest advances of IGBT technology (topologies, materials, etc.), and, moreover, the use of the latest advances in power semiconductor packaging.

 

Industrial Motor Drives

IGBTs are a good option to regulate the efficiency, speed, position, and torque of motors (e.g. pumps, fans, etc.)  as they switch the current flow to motors with minimal switching-time or conduction-period losses.

For more details, contact us to arrange a presentation.

Magnachip's Current IGBT product range

This is the current line up of IGBTs from Magnachip with a few more in the pipeline. Please check back for the latest list and if you have any queries, please contact us for a quick response by email or on our chat below.

KV.jpg
Family
Part No.
IC [A]
VCE(sat) [V]
Eon [mJ]
Eoff [mJ]
Package
High Speed
Conduction
High Ruggedness
650V
MBF15T65PEHTH
15A
1.65
0.26
0.14
TO220FP
High
y
650V
MBQ40T65FESCTH
40A
1.95
1.15
0.35
TO247
y
650V
MBQ40T65QESTH
40A
1.8
0.85
0.29
TO247
y
650V
MBQ50T65FESCTH
50A
1.95
1.4
0.37
TO247
y
650V
MBQ60T65PESTH
60A
1.8
0.92
0.53
TO247
y
650V
MBQ75T65PEHTH
75A
1.7
4.69
1.75
TO247
High
y
1200V
MBQ25T120FESC
25A
2
1.44
0.55
TO247
y
1200V
MBQ40T120FES
40A
2
1.96
0.54
TO247
y
1200V
MBQ40T120QES
40A
2.1
5.13
0.77
TO247
y
1200V
MBW50T120PHF
50A
1.85
6.4
3.4
Sawn on foil
Low
y
1200V
MBW100T120PH(F)
100A
2.05
18.2
6.9
Sawn on foil
Low
y
1200V
MBW75T120PS(F)
75A
2.1
7.2
1.9
Sawn on foil
y
1200V
MBW100T120PS(F)
100A
2.2
20.4
3.8
Sawn on foil
y
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